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SI2308BDS-T1-GE3
Datasheet
1MB
Specifications
| Digi-Key Part Number | SI2308BDS-T1-GE3TR-ND – Tape & Reel (TR) |
| SI2308BDS-T1-GE3CT-ND – Cut Tape (CT) | |
| SI2308BDS-T1-GE3DKR-ND – Digi-Reel® | |
| Manufacturer | Vishay Siliconix |
| Manufacturer Product Number | SI2308BDS-T1-GE3 |
| Description | MOSFET N-CH 60V 2.3A SOT23-3 |
| Manufacturer Standard Lead Time | 72 Weeks |
| Detailed Description | N-Channel 60 V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236) |
| Category | Discrete Semiconductor Products |
| Transistors – FETs, MOSFETs – Single | |
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current – Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 30 V |
| FET Feature | – |
| Power Dissipation (Max) | 1.09W (Ta), 1.66W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2308 |
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